Electron transport properties of gallium nitride for microscopic power device modelling

Experimental investigation of electron transport properties of gallium nitride nanowires

We report transport properties of gallium nitride GaN nanowires grown using direct reaction of ammonia and gallium vapor. Reliable devices, such as four-terminal resistivity measuring structures and field-effect transistors, were realized by dielectrophoretically aligning the nanowires on an oxidized silicon substrate and subsequently applying standard microfabrication techniques. Room-temperat...

Fundamentals of Gallium Nitride Power Transistors

Structure A device’s cost effectiveness starts with leveraging existing production infrastructure. EPC’s process begins with silicon wafers. Utiilizing existing silicon processing equipment, a thin layer of Aluminum Nitride (AlN) is grown on the Silicon to isolate the device structure from the Substrate. The isolation layer for 200 V and below devices is 300 V. On top of this, a thick layer of ...

2-d Simulation of Hot Electron-phonon Interactions in a Submicron Gallium Nitride Device Using Hydrodynamic Transport Approach

In this study, a thermal and electrical coupled device solver is developed to simulate the energy transfer mechanism within a GaN FET with a gate length of 0.2 mm. The simulation simultaneously solves a set of hydrodynamic equations (derived from the Boltzmann Transport Equation) and the Poisson equation for electron, optical phonon and acoustic phonon energies, electron number density, electri...

Identification of Transport Parameters for Gallium Nitride Based Semiconductor Devices

We present a methodology for the identification of transport parameters for Gallium Nitride (GaN) based semiconductor materials and devices. A Monte Carlo (MC) approach has been employed to investigate the electron transport in GaN and AlGaN, materials that are very important in device applications of high-power, high-frequency electronics. Our model is validated against measured data and compa...

Gallium Nitride-Based Power Amplifiers for Future Wireless Communication Infrastructure